Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement
نویسندگان
چکیده
Article history: Received 25 May 2015 Accepted 4 June 2015 Available online xxxx
منابع مشابه
Modulated Interference Effects and Thermal Wave Monitoring of High-dose Ion Implantation in Semiconductors
Under sufficiently high dose and energy, ions implanted into a semiconductor will produce an amorphous layer throughout the range in which nuclear stopping is the dominant mechanism for slowing the ions. In arsenic implanted silicon, for example, this corresponds to doses greater than 1014ions/cm2 and energies above 10 keV. Using a model for thermal and plasma wave-induced modulated reflectance...
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015